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 Hyper 3 mm (T1) LED, Non Diffused Hyper-Bright LED
LS 3336, LA 3336, LO 3336 LY 3336
Besondere Merkmale
q q q q q q
nicht eingefarbtes, klares Gehause zur Einkopplung in Lichtleiter als optischer Indikator einsetzbar Lotspiee mit Aufsetzebene gegurtet lieferbar Storimpulsfest nach DIN 40839
VEX06710
Features
q q q q q q
colorless, clear package optical coupling into light pipes for use as optical indicator solder leads with stand-off available taped on reel load dump resistant acc. to DIN 40839
Semiconductor Group
1
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Typ Type
Emissionsfarbe Color of Emission
Gehausefarbe Color of Package
Lichtstarke Luminous Intensity IF = 20 mA IV (mcd) 63 100 160 250 100 100 160 250 400 160 100 160 250 400 160 100 160 250 400 160 ... ... ... ... ... 500 200 320 500 800
Bestellnummer Ordering Code
LS 3336-QT LS 3336-R LS 3336-S LS 3336-T LS 3336-RU LA 3336-RU LA 3336-S LA 3336-T LA 3336-U LA 3336-SV LO 3336-RU LO 3336-S LO 3336-T LO 3336-U LO 3336-SV LY 3336-RU LY 3336-S LY 3336-T LY 3336-U LY 3336-SV
super-red
colorless clear
Q62703-Q3482 Q62703-Q3484 Q62703-Q3485 Q62703-Q3813 Q62703-Q3486 Q62703-Q3554 Q62703-Q3551 Q62703-Q3552 Q62703-Q3553 Q62703-Q3555 Q62703-Q3144 Q62703-Q3176 Q62703-Q3170 Q62703-Q3307 Q62703-Q3177 Q62703-Q3487 Q62703-Q3489 Q62703-Q3490 Q62703-Q3814 Q62703-Q3491
amber
colorless clear
... 800 ... 320 ... 500 ... 800 ... 1250 ... 800 ... 320 ... 500 ... 800 ... 1250 ... 800 ... 320 ... 500 ... 800 ... 1250
orange
colorless clear
yellow
colorless clear
Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0.
Semiconductor Group
2
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung1) Reverse voltage1) Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air
1) 1)
Symbol Symbol
Werte Values LS, LO, LA LY - 55 ... + 100 - 55 ... + 100 + 100 30 1 20 0.2
Einheit Unit C C C mA A
Top Tstg Tj IF IFM
VR Ptot
80
3 55
V mW
Rth JA
500
K/W
Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided.
Semiconductor Group
3
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 3 V Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR TC TC (typ.) (typ.) - 1.95 - 1.78 - 1.67 - 2.51 mV/K 645 LA 622 Werte Values LO 610 LY 591 nm Einheit Unit
632
615
605
587
nm
16
16
16
15
nm
50 2.0 2.6 0.01 10
50 2.0 2.6 0.01 10
50 2.0 2.6 0.01 10
50 2.0 2.6 0.01 10
Grad deg. V V A A
Temperaturkoeffizient von dom (IF = 20 mA) Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA
0.014 0.062 0.067 0.096 nm/K 0.14 0.13 0.13 0.13 nm/K
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV Temperature coefficient of VF, IF = 20 mA (typ.)
Semiconductor Group
4
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Relative spektrale Emission Irel = f (), TA = 25 C, IF = 20 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve
100 rel % 80
OHL00235
V
60 yellow orange amber super-red
40
20
0 400
450
500
550
600
650
nm
700
Abstrahlcharakteristik Irel = f () Radiation characteristic
40 30 20 10 0 1.0
OHL01646
50
0.8
0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0
Semiconductor Group
5
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Durchlastrom IF = f (VF) Forward current TA = 25C
10 2 mA F 5
OHL00232
Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA)
35
OHL00248
F mA 30
25 yellow 20 15
10 1 5
10 0
10
5
5
10 -1
1.0
1.4
1.8
2.2
2.6
3.0 V 3.4 VF
0
0
20
40
60
80 C 100 A
Relative Lichtstarke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25C
V 10 1
OHL00233
Relative Lichtstarke IV / IV(25C ) = f (TA) Relative luminous intensity IF = 20 mA
V (25 C) V 2.0
OHL00238
V (20 mA) 10 0 5
1.6
1.2 10 -1 5 superred yellow orange/amber 0.8
orange yellow amber super-red
10 -2 5
0.4
orange yellow amber super-red
10 -3 -1 10
5 10 0
5 10 1
F
mA 10 2
0 -20
0
20
40
60
C TA
100
Semiconductor Group
6
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter, TA = 25 C
10 1 A F 5
OHL00322
Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LY Duty cycle D = parameter, TA = 25 C
10 0 A 5
OHL00316
tp tp D= T
F
T D= 0.005 0.01 0.02 0.05 0.1
F
tp tp D= T
F
T D= 0.005 0.01 0.02 0.05
10 0 5 0.2 10 -1 5 0.5
0.1 10 -1 5 0.2
0.5
10 -2 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10 s 10 tp
1
2
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp
Mazeichnung Package Outlines
(Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified)
Area not flat
4.8 4.4
2.54mm spacing
1.1 0.9
0.7 0.4 0.8 0.4
0.6 0.4
3.4 3.1
1.8 1.2
29.0 27.0
3.7 3.5 6.1 5.7
0.6 0.4
Cathode Approx. weight 0.15 g
o2.9 o2.7
Cathode
GEX06951
Kathodenkennzeichnung: Cathode mark:
Kurzerer Lotspie Short solder lead
Semiconductor Group
7
1998-09-18


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